| PART |
Description |
Maker |
| NDL5551 NDL5551P NDL5551P1C NDL5551P1D NDL5551P2C |
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE 1 000 600 nm的光纤通信50毫米的铟镓砷雪崩光电二极管模
|
NEC, Corp.
NEC[NEC]
|
| NDL5551P1 NDL5551P2 NDL5553P NDL5553P1 NDL5553P1S |
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs PIN PHOTO DIODE MODULE
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs PIN PHOTO DIODE MODULE 1 000 600 nm的光纤通信80毫米铟镓砷PIN光电二极管模
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NDL5481P2 NDL5421P NDL5421P2 NDL5422P NDL5461P NDL |
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 120 mm InGaAs PIN PHOTO DIODE RECEPTACLE MODULE
|
NEC Corp.
NEC[NEC]
|
| X06FF3 X06FF5 X10FF3 |
600 V - 1,000 V Rectifiers
|
List of Unclassifed Manufacturers
|
| APG2C1-385 |
Struture: InGaN Peak Wavelength: 365 nm Optical Output Power: typ. 60 mW Life Time 10.000 hours
|
Roithner LaserTechnik GmbH
|
| APG2C1-410 |
Structure: InGaN Peak Wavelength: 410 nm Optical Output Power: typ. 125 mW Life Time: > 10.000 hours
|
Roithner LaserTechnik GmbH
|
| HMC362 |
GaAs HBT MMIC DIVIDE-BY-4, DC - 11.0 GHz
600,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
|
Hittite Microwave Corpo...
HITTITE[Hittite Microwave Corporation]
美国讯泰微波有限公司上海代表
|
| PS7142L-1A PS7142L-1A-E3 PS7142L-1A-E4 |
XTAL PLAS SMT 12X4 4PAD
NECs 6-PIN DIP 400V BREAK DOWN VOLTAGE 1-CH OPTICAL COUPLED MOS FET
16.000 MHZ, QTZ CRYSTAL, (HC-49)
|
California Eastern Laboratories
|
| SPA513 |
1 AMP, 15,000 to 20,000 VOLTS HIGH VOLTAGE RECTIFIER BRIDGE STACK
|
SSDI[Solid States Devices, Inc]
|
| SXF6521 |
2,000 V - 5,000 V Rectifiers 0.15 A - 0.50 A Forward Current 70 ns Recovery Time 0.5 A, 2000 V, SILICON, SIGNAL DIODE
|
Voltage Multipliers, Inc.
|
| PS7160L-2A-E4-A PS7160L-2A-E3 |
DUAL TRANSISTOR OUTPUT SOLID STATE RELAY, 1500 V ISOLATION-MAX
8-PIN DIP, 600 V BREAK DOWN VOLTAGE NORMALLY OPEN TYPE
8-PIN DIP, 600 V BREAK DOWN VOLTAGE NORMALLY OPEN TYPE 2-ch Optical Coupled MOS FET
|
Renesas Electronics Corporation
|
